Increase in resistivity of indium-tin-oxide films spin-coated on titanium-dioxides

摘要

ITO and TiO2 films were prepared on silicon substrate using spin-coating method. Three types of samples were prepared for comparison. They were ITO/TiO2(78nm-thick)/Si, ITO/TiO2(25nm-thick)/Si and ITO/Si. The resistivity of an ITO film prepared on TiO2 was larger than that on Si. Furthermore, the resistivity became larger with increasing the thickness of the underlying TiO2 layer.