Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

机译：在Pt / TiO 2 界面中插入超薄TaO x 层对电阻开关特性的影响

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An ultrathin ∼1 nm TaOx layer was inserted at the interface between a top Pt electrode and TiO2 as a restive switching dielectric to investigate resistive switching characteristics. A marked change in the initial resistance state and an improvement of the endurance were observed. These results can be interpreted as due to the TaOx layer working as an oxygen reservoir.

机译：在顶部Pt电极和TiO 2 之间的界面处插入了约1 nm的TaO x 超薄层，作为静态开关电介质，以研究电阻开关特性。观察到初始电阻状态的显着变化和耐久性的改善。这些结果可以解释为由于TaO x 层作为储氧层。

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《2011 International Meeting for Future of Electron Devices, Kansai》|2011年|p.110-111|共2页
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Wei Guobin; Murakami Hideki; Fujioka Tomohiro; Ohta Akio; Goto Yuta; Higashi Seiichiro; Miyazaki Seiichi;
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中图分类电子元件、组件;
关键词
redox reaction; stack structure; tantalum oxide; titanium oxide;

机译：氧化还原反应堆结构氧化钽氧化钛;

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Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

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