Progress in high-responsivity vertical-illumination type Ge-on-Si photodetecor operating at λ ∼1.55 µm

摘要

We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ∼1.55 µm. The 10Gbps photoreceiver with a fabricated 60 µm-diameter device exhibits high sensitivity of −19.5 dBm for λ∜1.55 µm.