A quantum approach to nanocrystal nonvolatile memory

摘要

This work establishes an accurate 3D physical model with quantum approach to analyze the small size nanocrystal (NC) nonvolatile memory. The basic memory performance, programming and erasing, is studied in detail. The trapping efficiency, Coulomb blockade and quantum confinement are the main factors affecting the memory performance. Tradeoff between these factors exists on the selection of NC size. The simulation results are also in agreement with other general experiment studies qualitatively.