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Evaluation of the contamination removal capability and Multilayer degradation in various cleaning methods

机译:评估各种清洁方法中的污染物去除能力和多层降解

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In this test, we evaluated the carbon contamination removal capabilities of various kinds of cleaning methods. And wealso evaluated the degradation of multilayer (with capping layer) caused by the cleaning process.In the contamination removal test, the contamination was formed by a synchrotron irradiation. And in the degradationtest, we evaluated Ru-capping layer and Si-capping layer.In the contamination removal test, the reflectivity recovery was confirmed in all cleaning conditions that were evaluated.However, there were differences among the reflectivity recoveries.In particular, plasma cleaning showed high removal capability. In VUV/O3 cleaning, the oxygen concentrationinfluenced the contamination removal capability.In Si-capping layer, none of the cleaning conditions exhibited any significant reflectance change. On the other hand, inRu-capping layer, a decrease in reflectance was noticed in VUV/03 cleaning with an oxygen concentration of 500ppm.In a comparison between Ru-capping layer and Si-capping layer, no significant difference was noticed in SPM cleaning,VUV/03 with oxygen concentration 45ppm, and in plasma with N2/H2 gas condition.
机译:在该测试中,我们评估了各种清洁方法的碳污染去除能力。和我们 还评估了由清洁过程引起的多层(带覆盖层)的劣化。 在污染去除试验中,通过同步辐射形成污染。在退化中 测试,我们评估了Ru-Cappe层和Si-覆盖层。 在污染去除试验中,在评估的所有清洁条件下证实了反射率回收率。 然而,反射率回收率存在差异。 特别地,等离子体清洁显示出高的去除能力。在VUV / O3清洗中,氧气浓度 影响了污染去除能力。 在Si-覆盖层中,没有任何清洁条件表现出任何显着的反射率变化。另一方面,在 Ru-Cappapp层,在VUV / 03清洁中注意到反射率降低,氧浓度为500ppm。 在Ru-封盖层和Si-覆盖层之间的比较中,在SPM清洁中没有发现显着差异, VUV / 03具有氧气浓度45ppm,并含有N2 / H2气体状况的血浆。

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