N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art fr>LG product of 16.8 GHz-um for mixed signal applications

摘要

In this paper, we describe a gate-first self-aligned MBE InGaN regrowth methodology for fabricating N-polar GaN-based MIS-HEMTs which exhibit ultra-low contact resistances of 23 ft-um, which is comparable to the lower band-gap technologies. These devices, not only show state-of-the-art fT-LG product values of 16.8 GHz-um for 130 nm gate-length for GaN, but also show exceptional performance at low supply voltages (VDS = 500 mV), thereby making GaN competitive not only to wide band-gap materials like SiC but also to low band-gap technologies by InGaAs HEMTs and InSb by having low knee voltages, high drive currents while still demonstrating relatively large breakdown voltages for unipolar (non-CMOS like) operation.