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A 15μW 12-bit dynamic range charge measuring front-end in 0.13μm CMOS

机译:采用0.13μmCMOS的15μW12位动态范围电荷测量前端

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A 100μm × 100μm readout cell with a power consumption of 15μW and optimized for 12 bits dynamic range is presented. This circuit has been developed to readout the hybrid pixel sensors for the Micro-Vertex Detector (MVD) of the PANDA experiment at GSI. The readout architecture is based on the Time-over-Threshold technique which allows to achieve low-power charge measurement with a high dynamic range. The front-end has been designed to handle input charges up to 100f C. The analog building blocks are described in detail, focusing the attention on the main design challenges: the dynamic range limitation, the implementation of a compact filter for the leakage compensation, and the management of the mismatch effects. A first prototype has been designed and produced in a CMOS 0.13μm technology and the test results are discussed. Given the very low-power consumption and the small size of the readout cell it is interesting to employ it as a compact digitizer for other applications. Preliminary studies have been done to extend this concept to the readout of double sided strip sensors of the PANDA MVD.
机译:提出了一种100μm×100μm的读出单元,其功耗为15μW,并针对12位动态范围进行了优化。开发该电路是为了读出GSI PANDA实验的微顶点检测器(MVD)的混合像素传感器。读出架构基于“阈值超时”技术,该技术可实现具有高动态范围的低功耗电荷测量。前端经过设计可处理高达100f C的输入电荷。详细描述了模拟构建块,重点关注主要设计挑战:动态范围限制,用于泄漏补偿的紧凑型滤波器的实现,和失配效应的管理。已经采用CMOS0.13μm技术设计并生产了第一台原型机,并讨论了测试结果。考虑到非常低的功耗和较小的读取单元尺寸,将其用作其他应用的紧凑型数字转换器很有意思。已进行了初步研究,以将此概念扩展到PANDA MVD的双面条形传感器。

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