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ECC design for fault-tolerant crossbar memories: A case study

机译:容错交叉开关存储器的ECC设计:案例研究

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Crossbar memories are promising memory technologies for future data storage. Although the memories offer trillion-capacity of data storage at low cost, they are expected to suffer from high defect densities and fault rates impacting their reliability. Error correction codes (ECCs), e.g., Redundant Residue Number System (RRNS) and Reed Solomon (RS) have been proposed to improve the reliability of memory systems. Yet, the implementation of the ECCs was usually done at software level, which incurs high cost. This paper analyzes ECC design for fault-tolerant crossbar memories. Both RS and RRNS codes are implemented and experimentally compared in terms of their area overhead, speed and error correction capability. The results show that the encoder and decoder of RS requires 7.5× smaller area overhead and operates 8.4× faster as compared to RRNS. Both ECCs has fairly similar error correction capability.
机译:CrossBar Memories是未来数据存储的承诺内存技术。虽然记忆以低成本提供了数万亿的数据存储容量,但它们预计会遭受影响其可靠性的高缺陷密度和故障率。已经提出了纠错码(ECC),例如冗余残留号码系统(RRNS)和REED所罗门(RS)以提高存储器系统的可靠性。然而,ECC的实施通常是在软件级别完成的,这引起了高成本。本文分析了ECC设计,实现了容错横梁记忆。在其面积的开销,速度和纠错能力方面,将和实验地实现了RS和RRNS代码。结果表明,与RRN相比,RS的编码器和RA的解码器需要7.5倍较小的区域开销,并操作8.4倍。两个ECC都具有相同的纠错能力。

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