Performance variations of ballistic and quasi-ballistic MOSFETs - Analytical variation model for virtual source potential and kT-Layer Length -

摘要

We have studied analytical model for performance variations of an extremely thin SOI-FET (ETSOI-FET) with an intrinsic Si (i-Si) channel in ballistic and quasi-ballistic regions, becuase ETSOIs are candidate for suppressing the performace variations as well as Coulomb scattering of carriers in the channel. It is newly found that drain current in ballistic ETSOIs still fluctuates even in an i-Si channel, which is due to dopant fluctuation in source/drain (S/D) extensions.