Layer-thickness-dependent formation of Si-nanocrystals embedded in amorphous Si/SiO2 multilayers

摘要

Layer-thickness dependence of Si-nanocrystal formation in amorphous Si/SiO2 multilayers during thermal annealing is experimentally demonstrated with RF-sputtered samples, and further explained by a modified model. The theoretical calculation shows that there is a lower limit (1.5nm) of Si layer thickness and lateral growth of Si-nanocrystal is unconstrained in such multilayers.