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The novel facet coating technology for 808nm semiconductor laser

机译:808nm半导体激光器的新颖刻面涂层技术

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摘要

A novel facet coating technology is presented by studying catastrophic optical mirror damage mechanism of semiconductor laser. In this technology, semiconductor laser are cleaved in the air, and the surface oxide layer is removed with a low energy ion source, flowed immediately by coating the facet with thin ZnSe layer of 20 nm. The function of this layer is to protect semiconductor laser facet, and prevent impurity particles diffusing to the facet. Finally the facet is coated with oxidative optical film. The test results show that the output power of the semiconductor laser with the ZnSe coated layer is 13% higher than that of the Si coated layer, and 47% higher than that of the oxide coated film. The device coated oxide film is damaged when current is 4.5 A, and the device coated with Si layer is damaged when current is 5.5 A, the final failed device is coated with ZnSe layer. In conclusion, the method of coating ZnSe layer on the semiconductor laser facet can prevent effectively the catastrophic optical mirror damage, and increase the output power of semiconductor lasers.
机译:通过研究半导体激光器的灾难性光学镜损伤机理,提出了一种新颖的刻面涂层技术。在该技术中,半导体激光器在空气中分裂,并用低能量离子源去除表面氧化物层,然后通过在端面上覆盖20 nm的ZnSe薄层使表面氧化物层立即流动。该层的功能是保护半导体激光刻面,并防止杂质颗粒扩散到刻面。最终,该小面涂有氧化光学膜。测试结果表明,具有ZnSe涂层的半导体激光器的输出功率比Si涂层的输出功率高13%,并且比氧化物涂层的膜输出功率高47%。电流为4.5 A时会损坏器件涂覆的氧化膜,而电流为5.5 A时会损坏涂覆有Si层的器件,最终失效的器件会覆盖ZnSe层。综上所述,在半导体激光刻面上涂覆ZnSe层的方法可以有效防止灾难性光学镜损坏,并增加半导体激光器的输出功率。

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