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Electrical characterization of Pd-PdO nanocomposites and PdO thin films prepared by thermal oxidation of Pd

机译:Pd-PdO纳米复合材料和Pd热氧化制备的PdO薄膜的电学表征

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摘要

Electrical characterization of nanometric PdO films produced by thermal oxidation of Pd films in air at atmospheric pressure is reported. The PdO films were characterized using the van der Pauw-Hall method to establish the effects of oxidation degree of Pd thin films. The measured carrier mobility is directly related to the oxidation rate and film thickness. The produced films are n-type with carrier concentration of 1017 to 1020 cm−3 and electron mobility of 22–38 and 20–28 cm2/Vs for complete and partially oxidized films, respectively. XRD studies were used as a tool to determine the complete oxidation of the Pd film considering the volume change in the unit cells of Pd and PdO.
机译:报道了通过在大气压力下在空气中对Pd膜进行热氧化而生成的纳米PdO膜的电学表征。利用范德堡-霍尔法对PdO薄膜进行表征,以建立Pd薄膜氧化程度的影响。测得的载流子迁移率与氧化速率和膜厚度直接相关。生产的薄膜为n型,载流子浓度为10 17 至10 20 cm -3 ,电子迁移率为22–38和20–对于完全氧化和部分氧化的膜,分别为28 cm 2 / Vs。考虑到Pd和PdO晶胞的体积变化,XRD研究被用作确定Pd膜完全氧化的工具。

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