Formation and Influence of the Built-In Surface Potentials on the Transversal Electronic Transport and the VAC of Silicon MIS Structures

摘要

The regularities of the modification of the current-voltage characteristics of MIS structures due to the formation of built-in surface potentials are investigated. Surface potentials are formed when an atomically clean surface of silicon crystals is obtained using microwave plasma microprocessing. Microwave plasma microprocessing was carried out in various chemically active gas media. The interpretation of the effect of surface potentials on transversal electron transport and the steepness of the current-voltage characteristics of silicon MIS devices has been experimentally established and proposed.