Molecular effusion-boltzmann model for parylene C deposition in deep trench

摘要

As an excellent thermal isolation approach, deep trench filled by parylene C has been widely used in versatile MEMS devices. Requirement of void-free trench filling in these applications called for a deep understanding of the parylene C deposition in high aspect ratio trenches. In this work, a molecular effusion-Boltzmann model is advanced to predict the parylene C filling behaviors. Numerical simulation results indicate that the present model can effectively describe the filling profiles and thereby guide a void-free trench filling, which are quite consistent with the experimental results.