Research of monolithic optoelectronic integrated circuit in 0.5μm standard CMOS technology

摘要

The Spatially Modulated (SM) photodetector and Double Photodetector (DPD) are designed in 0.5 μ m standard CMOS technology. Spice models of them are accomplished in SPECTRE environment based on analysis of its physical model. Two kinds of photodetectors and the compatible design monolithic optoelectronic integrated circuit (OEIC) with preamplifier are successfully fabricated in 0.5μm standard CMOS technology. At 850nm the measured responsivity of SM photodetector is 80mA/W at deffered terminal and 89mA/W at immediate terminal, while DPD is 40mA/W. Work frequency of SM OEIC and DPD OEIC reaches to 1.25GHz and 50MHz.