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Validity and Application of the TCR Method to MOL contactS

机译:TCR方法对MOL触点的有效性和应用

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As structure size decreases, electron scattering and liner conduction effects may lead to inaccuracy in the TCR method. To investigate these potential issues for tungsten systems, resistivity, grain size, and temperature derivatives of sheet resistance are measured as a function of thickness for CVD deposited films. Liner conduction was found to impact the apparent temperature dependence of sheet resistance for thin W films. W films exhibit a dp/dT value 39% higher than reported in literature for bulk. The effect of electron scattering at surfaces and grain boundaries on the temperature derivative of sheet resistance is predicted from common classical scattering models and it is concluded that these mechanisms do not play a significant role. It was also found that TCR accuracy is improved in W contact structures by using the derivative of resistivity determined from the W blanket film analysis. In addition, we also calculated TCR values from first principles which are in good agreement to our experimental results.
机译:由于结构尺寸降低,电子散射和衬里传导效应可能导致TCR方法中的不准确性。为了研究钨系统的这些潜在问题,作为CVD沉积薄膜的厚度的函数测量薄层电阻的电阻率,粒度和温度衍生物。发现衬垫传导来影响薄W薄膜的薄层电阻的表观温度依赖性。 W电影表现出比批量文献中报告的DP / DT值39 %。从常见的古典散射模型预测了表面和晶界在薄层电阻温度衍生物上的效果和晶界的影响,并且结论是这些机制不发挥重要作用。还发现,通过使用从W覆盖膜分析确定的电阻率的衍生率,在W接触结构中改善了TCR精度。此外,我们还计算出与我们实验结果一致的第一个原理的TCR值。

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