首页> 外文会议>Nanoelectronics Conference (INEC), 2010 >Anti-bunching from plasmon induced non-blinking single CdSe/ZnS quantum dot
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Anti-bunching from plasmon induced non-blinking single CdSe/ZnS quantum dot

机译:等离子体激元诱导的非闪烁单CdSe / ZnS量子点的反聚束

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CdSe/ZnS colloidal quantum dot generally exists blinking phenomenon during luminescence process, that remarkably influences its application as a single photon source. In this work, we used the effect of surface plasmon to effectively suppressed the blinking by locating quantum dot on gold film. The anti-bunching character was also observed with g(2)(0) as low as 0.34 at room temperature. Surface plasmon was shown to enhance the photoluminescence and reduce the lifetime of exciton, which was controlled by excitation power. Our result suggests a potential way to utilize CdSe/ZnS as a high efficient single photon emitter in optics.
机译:CDSE / ZnS胶体量子点通常存在发光过程中的闪烁现象,显着影响其作为单个光子源的应用。在这项工作中,我们利用表面等离子体的效果通过在金膜上定位量子点来有效地抑制闪烁。在室温下,在G (2)(0)中也观察到抗束性特征,低至0.34。显示表面等离子体以增强光致发光并减少激励动力控制的激子的寿命。我们的结果表明,在光学中使用CDSE / Zns作为高效单光子发射器的潜在方法。

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