The electrical properties improving of ITO films on cholesteric liquid crystal layer by using two-steps deposition process

摘要

Indium tin oxide (ITO) films have been deposited at room temperature by DC magnetron sputtering and grown on a cholesteric liquid crystal (Ch-LC) layers. The surface morphology and electrical properties of ITO thin films was analyzed by scanning electron microscope, 3-dimension microscope and four-point prober. In a systematic study, the enhancement of electrical properties of ITO films was achieved by a novel two-steps deposition process. In addition, it was apparent that the surface roughness of ITO films deposited on Ch-LC layers by two-steps process was improved as well. A surface roughness of 0.509 ¿m and a sheet resistance of 87.98 ohm/sq has been obtained by two steps process.