Properties of ITO films deposited on cholesteric liquid crystal layer by two-step DC magnetron sputtering

摘要

Indium tin oxide (ITO) films were deposited on cholesteric liquid crystal (Ch-LC) layers at room temperature using one-step and two-step DC magnetron sputtering processes, respectively. The surface morphologies and electrical properties of the ITO thin films were analyzed using scanning electron microscopy, X-ray diffraction, three-dimensional microscopy, and a four-point probe. The results showed that the two-step deposition process prompted the formation of a polycrystalline structure and improved both the surface roughness and the electrical resistance of the ITO film. Specifically, compared to the bare Ch-LC layer, the surface roughness was reduced from 1.8 to 0.6 μm and the electrical sheet resistance was reduced from 165 to 100 Ω/sq.