首页> 外文会议>Nanoelectronics Conference (INEC), 2010 >Modeling of 3-D trench structures with corrected effective medium approximation for model-based infrared reflectrometry
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Modeling of 3-D trench structures with corrected effective medium approximation for model-based infrared reflectrometry

机译:使用基于模型的红外反射仪,使用修正的有效介质近似值对3-D沟槽结构进行建模

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Model-based infrared reflectrometry (MBIR) has been introduced recently for measuring deep trench structures in microelectronics. The success of this technique relies heavily on accurate modeling and fast calculation of the infrared metrology process, which still remains as one challenge. In this paper, we propose a modeling method named corrected effective medium approximation (CEMA) for accurate and fast reflectivity calculation of three-dimensional (3-D) trench structures. The independence of the CEMA on trench depth, azimuth of incidence and the polarization state has been investigated to demonstrate the validity of the CEMA.
机译:最近引入了基于模型的红外反射仪(MBIR),用于测量微电子学中的深沟槽结构。该技术的成功很大程度上依赖于红外计量过程的精确建模和快速计算,这仍然是一个挑战。在本文中,我们提出了一种称为校正有效介质近似(CEMA)的建模方法,用于精确,快速地计算三维(3-D)沟槽结构的反射率。研究了CEMA在沟槽深度,入射角和极化状态方面的独立性,以证明CEMA的有效性。

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