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Low noise, low power dissipation mHEMT-based amplifiers for phased array application

机译:基于mHEMT的低噪声,低功耗,用于相控阵应用的放大器

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In this paper, we present two mHEMT-based low noise, low power dissipation amplifiers (LNAs) for X-band phased array applications. These LNAs provide ultra low noise figures while yielding over 20 dB of gain and dissipating less than 50 mW of DC power. The designs include both a standard, single ended topology as well as a balanced topology with novel current sharing that provides excellent return losses at the expense of only 0.3 dB of noise figure as compared to the single ended design.
机译:在本文中,我们介绍了两个用于X波段相控阵应用的基于mHEMT的低噪声,低功耗放大器(LNA)。这些LNA提供超低噪声系数,同时产生超过20 dB的增益和耗散不到50 mW的DC功率。这些设计包括标准的单端拓扑以及具有新颖电流共享功能的平衡拓扑,与单端设计相比,该拓扑以仅0.3 dB的噪声系数为代价提供了出色的回波损耗。

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