首页> 外文会议>Asia Communications and Photonics conference and Exhibition, 2009. ACP 2009 >AlGaInAs quantum-well lasers with semi-insulating buried-heterostructure for high-speed direct modulation up to 40 Gbps
【24h】

AlGaInAs quantum-well lasers with semi-insulating buried-heterostructure for high-speed direct modulation up to 40 Gbps

机译:具有半绝缘掩埋异质结构的AlGaInAs量子阱激光器,用于高达40 Gbps的高速直接调制

获取原文
获取外文期刊封面目录资料

摘要

We introduce our recent works on AlGaInAs quantum-well lasers with semi-insulating buried-heterostructure for ultra-high-speed transmission. The short-cavity DFB lasers show high-speed direct modulation at 25 and 40 Gbps, and the distributed reflector lasers with shortened active-region length provide reduced driving current in ultra-high-speed direct modulation.
机译:我们介绍了我们的最新工作,涉及具有半绝缘埋层异质结构的AlGaInAs量子阱激光器,用于超高速传输。短腔DFB激光器显示了25和40 Gbps的高速直接调制,而有源区长度缩短的分布式反射器激光器在超高速直接调制中提供了减小的驱动电流。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号