A CDU Comparison of Double Patterning Process Options Using Monte Carlo Simulation

摘要

Determination of the optimal double patterning scheme depends on cost, integration complexity, and performance. This paper will compare the overall CDU performance of litho-etch-litho-etch (LELE) versus a spacer approach. The authors use Monte Carlo simulation as a way to rigorously account for the effect of each contributor to the overall CD variation of the double patterning process. Monte Carlo simulation has been applied to determine CD variations in previous studies, but this paper will extend the methodology into double patterning using a calibrated resist model with topography.