首页> 外文会议>ASME international mechanical engineering congress and exposition;IMECE2008 >IMPACT OF MICRO/NANOSCALE HEAT TRANSFER IN SILICON SUBSTRATES ON THERMAL INTERFACE RESISTANCE CHARACTERIZATION
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IMPACT OF MICRO/NANOSCALE HEAT TRANSFER IN SILICON SUBSTRATES ON THERMAL INTERFACE RESISTANCE CHARACTERIZATION

机译:硅基质中微尺度/纳米尺度的传热对热界面电阻特性的影响

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We consider different sources of potential systematic errors in the thermal interface resistance measurements. Sub-continuum heat conduction and spatial non-equilibrium between electrons and phonons in a metal may lead to overestimation of the thermal interface resistance. The use of an erroneous substrate thermal conductivity can also cause significant systematic errors in steady- and quasi-steady state measurements of the thermal interface resistance. Our results highlight an urgent need for new systematic experimental studies to confirm the magnitude of intrinsic thermal interface resistance.
机译:我们认为热界面电阻测量中的潜在系统误差的不同来源。金属中的电子和声子之间的副连续导热和空间非平衡可能导致热界面电阻的高估。使用错误的基板导热率也可能在热界面电阻的稳定和准稳态测量中引起显着的系统误差。我们的结果突出了新的系统实验研究迫切需要确认内在热界面电阻的幅度。

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