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THERMAL RESISTANCE OF SILICON/GERMANIUM INTERFACES FROM LATTICE DYNAMICS CALCULATIONS

机译:晶格动力学计算的硅/锗界面的热阻

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摘要

Phonon scattering at the interface between two materials results in a thermal resistance, R. An ability to accurately predict the thermal resistance of semiconductor interfaces is important in devices where phonon interface scattering is a significant contributor to the overall thermal resistance (e.g., computer chips with high component density). This ability will also lead to improvements in the design of semiconductor superlattices with low thermal conductivity, desirable in thermoelectric energy conversion applications.
机译:在两种材料之间的界面处的声子散射会导致热阻R。在声子界面散射是整体热阻的重要因素的设备中,准确预测半导体界面的热阻的能力很重要。高组件密度)。这种能力还将导致热导率低的半导体超晶格设计的改进,这在热电能量转换应用中是理想的。

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