Predictive modeling for EBPC in EBDW

摘要

We demonstrate a flow for e-beam proximity correction (EBPC) to e-beam direct write (EBDW) wafer manufacturingprocesses, demonstrating a solution that covers all steps from the generation of a test pattern for (experimental or virtual)measurement data creation, over e-beam model fitting, proximity effect correction (PEC), and verification of the results.We base our approach on a predictive, physical e-beam simulation tool, with the possibility to complement this withexperimental data, and the goal of preparing the EBPC methods for the advent of high-volume EBDW tools.As an example, we apply and compare dose correction and geometric correction for low and high electron energies onID and 2D test patterns. In particular, we show some results of model-based geometric correction as it is typical for theoptical case, but enhanced for the particularities of e-beam technology.The results are used to discuss PEC strategies, with respect to short and long range effects.