TOF-SIMS characterization of Boron and phosphorus distribution in sub-atmospheric chemical vapour deposition borophosphosilicate glass (SA-CVD BPSG) films

摘要

Deposition of BPSG films as dielectrics is a critical step in semiconductor device manufacturing. Accurate control of concentration depth profile of Boron and Phosphorus in BPSG is important, because these variables determine the performance and reliability of the dielectric film. In this study, a method to characterize BPSG films using TOF-SIMS is shown. A failure analysis case study in which TOF-SIMS characterization allows correlating Tungsten extrusion with non-uniform dopant distribution is presented.