A Robust Ultrafast Switching Methodology for Device Parameter Characterization of Bias-Temperature Instability

摘要

A robust methodology for extracting MOSFET parameters (threshold voltage, V_t and effective mobility, μ_(eff)) affected by the bias-temperature instability phenomenon is presented. The method is based on customary pulsed current-voltage measurement hardware and hence may be readily implemented using commercially available set-ups. Application of this method for V_l and μ_(eff) extraction of a 1.8-nm thick SiON gate p-MOSFET under negative-bias temperature stress is demonstrated.