Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection

摘要

A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed.