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Advanced Precursor Development for Sr and Ti Based Oxide Thin Film Applications

机译:用于Sr和Ti基氧化物薄膜应用的高级前体开发

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In this work, we evaluated novel Sr and Ti precursors for atomic layer deposition application. Traditional Sr precursor Sr(thd)_2 is a solid with very low vapor pressure, high melting point, and requires high temperature oxidation for efficient carbon removal.. In comparison, bulky cyclopentadienyl based Sr compounds display high vapor pressures, low melting points, reactivity with water and high ALD growth rates. We also evaluated the effect of various stabilizing adducts on the properties of Sr cyclopentadienyl precursors and on the SrO ALD process. Sr precursors studied include AbsoluteSr Sr(iPr_3Cp)_2, HyperSr.THF Sr(iPr_3Cp)_2.2THF, HyperSr.DME Sr(iPr_3Cp)_2.DME, StarSr.THF Sr(Me_5Cp)_2.THF and StarSr.DME Sr(iPr_3Cp)_2.DME. Novel Ti precursors like PrimeTi (Ti(MeCp)(OMe)_3), StarTi (Ti(Me_5Cp)(OMe)_3), TyALD (TiCp(NMe_2)_3) and StarTyALD (TiMe_5Cp(NMe_2)_3) developed using heteroleptic chemistry are evaluated for TiO_2 ALD. Finally, compatibility of the novel HyperSr.THF along with Ti precursors such as PrimeTi and StarTi in terms of composition tunability and material properties for STO ALD are studied.
机译:在这项工作中,我们评估了用于原子层沉积应用的新型Sr和Ti前驱体。传统的Sr前体Sr(thd)_2是一种具有极低蒸气压,高熔点的固体,并且需要高温氧化才能有效去除碳。相比之下,庞大的基于环戊二烯基的Sr化合物显示出高蒸气压,低熔点,反应性水和高ALD增长速度。我们还评估了各种稳定加合物对Sr环戊二烯基前体的性能和SrO ALD工艺的影响。研究的Sr前体包括AbsoluteSr Sr(iPr_3Cp)_2,HyperSr.THF Sr(iPr_3Cp)_2.2THF,HyperSr.DME Sr(iPr_3Cp)_2.DME,StarSr.THF Sr(Me_5Cp)_2.THF和StarSr.DME Sr(iPr_3 )_2.DME。使用杂化化学方法开发的新型Ti前体,例如PrimeTi(Ti(MeCp)(OMe)_3),StarTi(Ti(Me_5Cp)(OMe)_3),TyALD(TiCp(NMe_2)_3)和StarTyALD(TiMe_5Cp(NMe_2)_3)。评估TiO_2 ALD。最后,研究了新型HyperSr.THF与Ti前体(例如PrimeTi和StarTi)在成分可调性和STO ALD的材料性能方面的相容性。

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