4H-SiC Bipolar Junction Transistors with A Current Gain of 108

摘要

4H-SiC BJTs with a common emitter current gain (β) of 108 at 25°C have been demonstrated. The high current gain was accomplished by using a base as thin as 0.25 μm. The current gain decreases at high temperatures but is still greater than 40 at 300°C. The device demonstrates an open emitter breakdown voltage (BVcbo) of 1150 V, and an open base breakdown voltage (BV_(CEO)) of 250 V. A low specific on-resistance of 3.6 mΩ-cm~2 at 25°C was achieved. The BJTs have shown blocking capabilities over a wide range of operating temperatures up to 300°C.