Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation

摘要

6H-SiC n~+p diodes fabricated on a p-type epitaxial layer were irradiated with 1MeV-electrons at fluences up to 6×10~(16) cm~(-2) to clarify their radiation tolerance. Charge Collection Efficiencies (CCEs) were evaluated from the Transient Ion Beam Induced Current (TIBIC) using Oxygen (O) ions. The CCE of 93 % was obtained for non-electron-irradiated diodes, and no significant change in CCE was observed for diodes irradiated with electrons at fluences below 1 × 10~(15) cm~(-2). The degradation of CCE was observed after irradiation at fluences above 5×10~(-2) cm~(-2).