A simple model based on the simulation of distributed series resistance effects in solar cells is presented. This model overcomes limitations of the standard two-diode model representation of solar cells in respect to fitting Suns-Voc (m-Voc) and Jsc-Suns curves. The model results include (i) an improved understanding of two-dimensional current flows in shunted solar cells, (ii) the prediction of shunt types from m-Voc curves and corresponding distributed resistance model fits, (iii) the insight that lateral current flows in solar cells are responsible for deviations between Jsc-Suns data and two-diode model fits in the high illumination range. The presented approach extends the application range of Suns-Voc measurements to solar cells which cannot adequately be described with the two-diode model.
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