Charge carriers thermal activation energies are obtained from the Arrhenius plot of photoluminescence vs. temperature intensity measurements made on InP/InAs53P47 multi-quantum well solar cells. A theoretical investigation consisting of band structure calculation was undertaken in order to determine the height of the effective potential barriers seen by photo-carriers created in the InAs53P47 quantum wells. A very good agreement is found between experimentally obtained activation energies and theoretically determined effective potential barriers. These results infer that light holes thermionic escape drives the PL intensity decrease at lower temperatures. For an intermediate temperature range, a PL activation energy corresponding to the difference in effective confining potential barrier between heavy holes and light holes is obtained. At higher temperatures, the PL extinction process is dominated by direct heavy-hole escape. These results offer some insights for better designs of photovoltaic quantum confined devices.
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机译：电荷载流子的热活化能从InP / InAs 53 P 47 多量子阱太阳能电池的光致发光与温度强度测量的Arrhenius图获得。为了确定InAs 53 P 47 量子阱中产生的光载流子所能看到的有效势垒的高度，进行了由能带结构计算组成的理论研究。在实验获得的活化能和理论上确定的有效势垒之间找到了非常好的一致性。这些结果表明，在较低温度下，轻空穴热电子逸出驱动了PL强度的降低。对于中间温度范围，获得与重孔和轻孔之间的有效限制势垒之差相对应的PL活化能。在较高的温度下，PL的消光过程主要是直接的重空穴逸出。这些结果为光伏量子约束器件的更好设计提供了一些见识。
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