Characterization of CdZnTe crystal grown by bottom-seeded Bridgman and Bridgman accelerated crucible rotation techniques

摘要

The growth of CdZnTe crystals with diameter up to 60 mm using bottom-seeded Bridgman method as well as Bridgman accelerated crucible rotation technique (ACRT-B) was investigated. Both ingots exhibit high yields, where single crystal with the volume exceeding 200 cm3 is produced. The crystal properties of two ingots were compared in the aspects of yields, crystalline quality and composition uniformity. For CdZnTe ingot grown by bottom-seeded Bridgman method, the full width at half-maximum (FWHM) of X-ray rocking curve was determined to be 36", indicating a better crystalline quality than ingot grown by ACRT-B method, which gave FWHM of 56". The composition distribution of Zn and In in CdZnTe was determined by using electron probe microanalysis (EPMA) and inductively coupled plasma mass spectrometry (ICPMS), respectively. The effective segregation coefficients of Zn kZn and In kIn in the two ingots were evaluated by fitting the experimental data with the Pfann equation.