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High electromechanical coupling coefficient SAW resonator on Ta2O5/Al/LinbO3 structure for wide duplex gap application

机译:Ta 2 O 5 / Al / LinbO 3 结构上的高机电耦合系数声表面波谐振器,适用于宽双工间隙应用

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This paper describes the development of high electromechanical coupling coefficient (K2) SAW resonator on a Ta2O5/Al/LiNbO3 structure for wide duplex gap application. We have cleared that the optimum Ta2O5 thickness which the high performance SAW resonator without Rayleigh-mode spurious response could be realized. Also, the Ta2O5 film has an advantage of decreasing the film thickness compared with SiO2 film. The developed SAW resonator shows the excellent performances which are low insertion loss, high attenuation, and high K2 of 23%. So, we have exhibited the possibility of Ta2O5/Al/5°YX-LiNbO3 structure for wide duplex gap application as the alternatives to the SiO2/Al/5°YX-LiNbO3 structure. And, the SAW resonator has the possibility to apply to Band IV duplexer.
机译:本文介绍了Ta 2 O 5 / Al / LiNbO 上高机电耦合系数(K 2 )SAW谐振器的发展3 结构用于宽双工间隙应用。我们已经清楚,可以实现没有瑞利模式寄生响应的高性能SAW谐振器的最佳Ta 2 O 5 厚度。而且,与SiO 2 膜相比,Ta 2 O 5 膜具有减小膜厚度的优点。研制出的声表面波谐振器具有优良的性能,即低插入损耗,高衰减和23%的高K 2 。因此,我们展示了Ta 2 O 5 / Al /5ÃÂβ°YX-LiNbO 3 结构的可能性宽双工间隙应用作为SiO 2 / Al /5Ãβ·YY-LiNbO 3 结构的替代物。并且,SAW谐振器有可能应用于频带IV双工器。

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