Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications

摘要

Vertical In_0.53Ga_0.47As tunnel field effect transistors (TFETs) with 100nm channel length and high-k/metal gate stack are demonstrated with high I_on/I_off ratio (>10⁴). At V_DS = 0.75V, a record on-current of 20¿A/¿m is achieved due to higher tunneling rate in narrow tunnel gap In_0.53Ga_0.47As. The TFETs exhibit gate bias dependent NDR characteristics at room temperature under forward bias confirming band to band tunneling. The measured data are in excellent agreement with two-dimensional numerical simulation at all drain biases. A novel 6T TFET SRAM cell using virtual ground assist is demonstrated despite the asymmetric source/drain configuration of TFETs.