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VANADIUM THIN FILMS PREPARED BY CHEMICAL VAPOR DEPOSITION FOR SEPARATING HYDROGENE

机译:化学气相沉积钒分离制备钒薄膜

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Vanadium thin films were prepared on sintered porous metallic substrates by chemical vapor deposition (CVD) to approach the thermal expansion coefficient of films and substrates. Organometallic compound was used as a vanadium source to avoid chlorine, which is harmful to metallic materials. The films were obtained under controlled conditions, which were processing temperatures, pressures of CVD chamber and flow rates of carrier gas (Ar) for source material. The morphologies of films were observed by scanning electron microscopy (SEM), and the elements in the films were investigated by energy dispersive X-ray spectroscopy (EDX).
机译:通过化学气相沉积(CVD)在烧结的多孔金属基材上制备钒薄膜,以达到薄膜和基材的热膨胀系数。有机金属化合物被用作钒源以避免氯,它对金属材料有害。在受控条件下获得薄膜,这些条件是处理温度,CVD室的压力和原料的载气(Ar)的流速。通过扫描电子显微镜(SEM)观察膜的形态,并通过能量色散X射线光谱法(EDX)研究膜中的元素。

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