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Development status of EUV sources for use in Beta-tools and high-volume chip manufacturing tools

机译:EUV源的开发现状用于β-工具和大卷芯片制造工具

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In the paper we give an update about the development status of gas discharge produced plasma (GDPP) EUV sources at XTREME technologies. Already in 2003 first commercial prototypes of xenon GDPP sources of the type XTS 13-35 based on the Z-pinch with 35 W power in 2π sr have been delivered and integrated into micro-exposure tools from Exitech, UK. The micro-exposure tools with these sources have been installed in industry in 2004. The first tool has made more than 100 million pulses without visible degradation of the source collector optics. For the next generation of full-field exposure tools (we call it Beta-tools) we develop GDPP sources with power of > 10 W in intermediate focus. Also these sources use xenon as fuel which has the advantage of not introducing additional contaminations. Here we describe basic performance of these sources as well as aspects of collector integration and debris mitigation and optics lifetime. To achieve source performance data required for high volume chip manufacturing we consider tin as fuel for the source because of its higher conversion efficiency compared to xenon. While we had earlier reported an output power of 400 W in 2π sr from a tin source we could reach meanwhile 800 W in 2π sr from the source in burst operation. Provided a high power collector is available with a realistic collector module efficiency of between 9% and 15% these data would support 70 - 120 W power in intermediate focus. However, we do not expect that the required duty cycle and the required electrode lifetimes can be met with this standing electrode design Z-pinch approach. To overcome lifetime and duty cycle limitations we have investigated GDPP sources with tin fuel and rotating disk electrodes. Currently we can generate more than 200 W in 2π sr with these sources at 4 kHz repetition rate. To achieve 180 W power in intermediate focus which is the recent requirement of some exposure tool manufacturers this type of source needs to operate at 21 - 28 kHz repetition rate which may be not possible by various reasons. In order to make operation at reasonable repetition rates with sufficient power possible we have investigated various new excitation concepts of the rotating disk electrode configurations. With one of the concepts pulse energies above 170 mJ in 2π sr could be demonstrated. This approach promises to support 180 W intermediate focus power at repetition rates in the range between 7 and 10 kHz. It will be developed to the next power level in the following phase of XTREME technologies' high volume manufacturing source development program.
机译:在论文中,我们在Xtreme Technologies上提供了关于气体放电产生的血浆(GDPP)EUV源的发展状况的更新。已经在2003年,基于Z-PINCH的XENON GDPP源的首先商业原型,基于Z-PINCH,在2πSR中,已被输送并集成到英国Exitech的微曝光工具中。 2004年的工业中已安装具有这些来源的微观曝光工具。第一个工具已经制作了超过1亿脉冲而无明显降解源收集光学器件。对于下一代全场曝光工具(我们称之为Beta-Tools),我们在中间焦点中开发出具有> 10 W的功率的GDPP来源。这些来源也使用氙作为燃料,其具有不引入额外污染的优点。在这里,我们描述了这些来源的基本性能以及收集器集成和碎片缓解和光学寿命的方面。为了实现高容量芯片制造所需的源代理数据,我们认为与氙的转换效率更高的转换效率,我们认为锡作为源的燃料。虽然我们早些时候在锡源中报告了从锡源的2πsr中的400 w的输出功率从突发操作中的源极其可以达到2πsr。提供高功率收集器可提供逼真的收集器模块效率,介于9%至15%之间,这些数据将支持70 - 120 W的中间焦点。然而,我们不希望能够满足所需的占空比和所需的电极寿命,并且可以通过这种站立电极设计Z-PINCH方法。为了克服寿命和占空比限制,我们研究了使用锡燃料和旋转盘电极的GDPP来源。目前,我们可以以4 kHz重复率,在2πSR中产生200多个以上的源。为了达到180 W的中间重点,这是最近的一些曝光工具制造商的要求,这种类型的源需要以21 - 28 kHz的重复率运行,这可能是不可能的各种原因。为了以足够的功率进行合理的重复速率进行操作,我们已经研究了旋转盘电极配置的各种新的激励概念。对于2πSR中的170 MJ以上的概念脉冲能量之一可以进行说明。这种方法有望在7到10 kHz的范围内以重复率支撑180 W中的中间焦点功率。它将在以下Xtreme Technologies'高批量制造源开发计划的以下阶段开发到下一个功率水平。

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