Chemical Data Writing into Metal/oxide Interface: Characterization of Low Dimensional Interface Reactions by I-V Measurements

摘要

We investigated electric and chemical properties of metal/yttria interfaces (M/Y_2O_3, M = Pt or Au). The Pt/Y_2O_3 interface can be chemically activated by bias voltage, yielding a microscopic reactive center at the interface. The oxidation-reduction of the center alternatively changed resistivity of Pt/Y_2O_3, and the alteration provided hysteresis with respect to the bias voltage, i.e. a memory-effect. On the other hand, for Au/Y_2O_3, since non-oxidization of Au ejects of O_2 gas from the interface, no memory-effect can be found. Possible reaction processes of these M/Y_2O_3 systems were proposed, and the balance between oxidation and reduction at the microscopic reactive center was concluded to be essential for the memory-effect.