A 28.5GHz RF receiver front-end on a 70GHz ƒT SiGe BiCMOS process

摘要

This paper presents the design and test of an RF receiver front-end aimed at 28.5GHz center frequency for LMDS applications. The challenge was to implement the receiver in a 0.25mum SiGe BiCMOS process in which the active devices have 70GHz f_r (close to twice the target frequency). This process was optimized for a decade lower than the current application but the passive components have reasonable quality factors at the target frequency.