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Field Emission Properties of Tungsten Carbide Thin Films Formed on Tungsten Tips

机译:钨尖端上形成的碳化钨薄膜的场发射特性

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Field emission patterns of tungsten carbide film formed on a tungsten tip surface were observed after the tungsten tip was annealed at appropriate experimental conditions. Current voltage characteristic of the tungsten carbide film was measured in situ, and its work function was self-consistently calculated to be 3.73 eV according to the Fowler-Nordheim theory. Compared with clean tungsten tips, the work function of the tungsten tip coated with tungsten carbide film is lowered and the emission current stability is improved, which indicates the usefulness of tungsten carbide in the development of field emitters.
机译:在适当的实验条件下将钨尖端退火之后,观察到在钨尖端表面上形成的碳化钨膜的场发射图案。现场测量碳化钨薄膜的电流电压特性,并根据Fowler-Nordheim理论自洽地计算出其功函数为3.73 eV。与干净的钨尖相比,涂覆有碳化钨膜的钨尖的功函数降低,发射电流的稳定性得到改善,这表明碳化钨在场致发射体的开发中是有用的。

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