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The Effect of Orientation on the Properties of Transparent Conducting SnO2 :F Films

机译:取向对透明导电SnO2:F薄膜性能的影响

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Highly transparent and low-resistance SnO2:F films have been deposited by an ultrasonic spray pyrolysis process. SnCl4·5H2O and NH4F were used as tin source compound and for F doping, respectively. The temperature of substrates was about 360°C. An X-ray diffraction (XRD) unit was used for recording the XRD patterns. Surface morphology, optical transmittance and sheet resistance were examined and characterized. The XRD results snow that the primary crystal structures of thin films are polycrystalline SnO2 tetragonal phase. The SnO2: F films, which deposited under different conditions , have different preferred orientation among (110), (200). The films with strong (200) orientations have the lowest sheet resistance at 5 Ω/□. All films are highly transparent and uniform.
机译:通过超声喷雾热解工艺已沉积了高度透明和低电阻的SnO2:F膜。 SnCl4·5H2O和NH4F分别用作锡源化合物和F掺杂。基板的温度为约360℃。 X射线衍射(XRD)单元用于记录XRD图案。检查并表征了表面形态,透光率和薄层电阻。 XRD结果表明,薄膜的主要晶体结构为多晶SnO2四方相。在不同条件下沉积的SnO2:F膜在(110),(200)中具有不同的优选取向。具有强(200)取向的薄膜在5Ω/□时具有最低的薄层电阻。所有薄膜都是高度透明且均匀的。

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