InGaP-Plus™: Advanced GaAs BiFET Technology and Applications

摘要

The InGaP-Plus™ BiFET technology has been developed at ANADIGICS for high volume production of commercial MMICs. The vertical integration of the InGaP HBT and the pHEMT on the same 6 inch GaAs epitaxial wafer allows independent optimization of each device for a given application. This is possible since the only shared epitaxial layer among those of the HBT and pHEMT structure is a heavily n-doped layer located between the HBT and the FET structure. Otherwise, the process flow has been developed to minimize cost and maximize yield. The InGaP-Plus™ BiFET technology allows greater integration of the various dc and rf functions required in front end modules on a single chip.