Vertical-HVPE as a Production Method for Free-Standing GaN-Substrates

摘要

The cost effective growth of free standing GaN substrates requires the boule growth approach. We developed a Vertical Hydride Vapor Phase Epitaxy (VHVPE) tool for the growth of up to 7 cm long GaN boules of 2 inch size. Prototypes were built and optimized with respect to total growth rate, parasitic ammonium chloride deposition and growth uniformity of the boule.