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Microscale Damping Using Thin Film Active Materials

机译:使用薄膜活性材料的微尺度阻尼

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This paper focuses on understanding and developing a new approach to dampen MEMS structures using both experiments and analytical techniques. Thin film Nitinol and thin film Terfenol-D are evaluated as a damping solution to the micro scale damping problem. Stress induced twin boundary motion in Nitinol is used to passively dampen potentially damaging vibrations. Magnetic domain wall motion is used to passively dampen vibration in Terfenol-D. The thin films of Nitinol, Nitinol/Silicon laminates and Nitinol/Terfenol-D/Nickel laminates have been produced using a sputter deposition process and damping properties have been evaluated. Dynamic testing shows substantial damping (tan 8) measurable in each case. Nitinol film samples were tested in the Differential Scanning Calorimetry (DSC) to determine phase transformation temperatures. The twin boundary mechanism by which energy absorption occurs is present at all points below the Austenite start temperature (approximately 69°C in our film) and therefore allows damping at cold temperatures where traditional materials fail. Thin film in the NiTi/Si laminate was found to produce substantially higher damping (tan δ = 0.28) due to the change in loading condition. The NiTi/Si laminate sample was tested in bending allowing the twin boundaries to be reset by cyclic tensile and compressive loads. The thin film Terfenol-D in the Nitinol/Terfenol-D/Nickel laminate was shown to produce large damping (tan δ = 0.2). In addition to fabricating and testing, an analytical model of a heterogeneous layered thin film damping material was developed and compared to experimental work.
机译:本文着重于理解和开发一种利用实验和分析技术来抑制MEMS结构的新方法。评估了薄膜镍钛诺和薄膜Terfenol-D作为微尺度阻尼问题的阻尼解决方案。镍钛诺中应力引起的双边界运动被用来被动地阻尼潜在破坏性的振动。磁畴壁运动用于被动地衰减Terfenol-D中的振动。使用溅射沉积工艺生产了镍钛诺,镍钛诺/硅层压板和镍钛诺/ Terfenol-D /镍层压板的薄膜,并评估了阻尼性能。动态测试表明,每种情况下都可以测量到很大的阻尼(tan 8)。镍钛诺薄膜样品在差示扫描量热法(DSC)中进行了测试,以确定相变温度。在低于奥氏体起始温度(在我们的薄膜中大约为69°C)的所有点处都存在发生能量吸收的双边界机制,因此可以在传统材料失效的低温下进行阻尼。由于负载条件的变化,发现NiTi / Si层压板中的薄膜产生明显更高的阻尼(tanδ= 0.28)。对NiTi / Si层压板样品进行了弯曲测试,允许通过循环拉伸和压缩载荷重设孪晶边界。 Nitinol / Terfenol-D / Nickel层压板中的Terfenol-D薄膜显示出较大的阻尼(tanδ= 0.2)。除了制作和测试之外,还开发了一种非均质层状薄膜阻尼材料的分析模型,并将其与实验工作进行了比较。

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