【24h】

OCD metrology by floating n/k

机译:通过浮动n / k进行OCD计量

获取原文

摘要

In this paper, one of the major contributions to the OCD metrology error, resulting from within-wafer variation of the refractive index/extinction coefficient (n/k) of the substrate, is identified and quantified. To meet the required metrology accuracy for the 65-nm node and beyond, it is suggested that n/k should be floating when performing the regression for OCD modeling. A feasible way of performing such regression is proposed and verified. As shown in the presented example, the measured CDU (3σ) with n/k fixed and n/k floating is 1.94 nm and 1.42 nm, respectively. That is, the metrology error of CDU committed by assuming n/k fixed is more than 35% of the total CDU.
机译:在本文中,确定并量化了由于晶片内衬底的折射率/消光系数(n / k)的晶片内变化而导致的OCD计量误差的主要贡献之一。为了满足65纳米及以上节点所需的计量精度,建议在执行OCD建模回归时,n / k应该浮动。提出并验证了进行这种回归的可行方法。如本示例所示,在固定的n / k和n / k浮动的情况下,测得的CDU(3σ)分别为1.94 nm和1.42 nm。也就是说,假设n / k固定,则提交的CDU的计量误差大于总CDU的35%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号