Acousto-Ferroelectric RAM -New Type of Nonvolatile Memory Device

机译：铁电RAM-新型非易失性存储设备

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In this paper, a new paradigm for the operation principle of a ferroelectric random access memory (FeRAM) is presented. The new type of FeRAM is based on piezo-acoustic phenomena in ferroelectric films. It is called acousto-ferroelectric RAM (AFeRAM) beca

机译：本文提出了一种铁电随机存取存储器（FeRAM）工作原理的新范例。新型FeRAM基于铁电薄膜中的压电声现象。它被称为声铁电RAM（AFeRAM）beca

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《Non-Volatile Memory Technology Symposium, 2007》|2007年|P.53-55|共3页
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Krieger; J.H.;
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中图分类工业技术;
关键词
ferroelectric storage; random-access storage; acousto ferroelectric RAM; ferroelectric films; nonvolatile memory device; piezo acoustic phenomena;

机译：铁电存储;随机存取存储;声电铁RAM;铁电膜;非易失性存储器件;压电声现象;

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专利

1. Acousto-Ferroelectric Nonvolatile RAM [J] . Ju. H. Krieger Integrated Ferroelectrics . 2008,第0期

机译：铁电非易失性RAM
2. Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing [J] . Man Chang, Musarrat Hasan, Seungjae Jung, Microelectronic Engineering . 2007,第9a10期

机译：通过高压湿蒸汽退火改善MANOS型非易失性存储器件的存储性能
3. Ferroelectric control of electron half-metallicity in A-type antiferromagnets and its application to nonvolatile memory devices [J] . Peng Jiang, Lili Kang, Hua Hao, Physical review.B.Condensed matter and materials physics . 2020,第24期

机译：A型反铁渣中电子半金属化的铁电控制及其在非易失性存储器件的应用
4. Acousto-Ferroelectric RAM -New Type of Nonvolatile Memory Device [C] . Krieger, J.H. Non-Volatile Memory Technology Symposium, 2007 . 2007

机译：铁电RAM-新型非易失性存储设备
5. Device Design and Process Integration of High Density Nonvolatile Memory Devices. [D] . Ferdousi, Fahmida. 2011

机译：高密度非易失性存储设备的设备设计和过程集成。
6. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [O] . Ngoc Huynh Van, Jae-Hyun Lee, Dongmok Whang, -1

机译：基于Ω型栅极有机铁电P（VDF-TrFE）场效应晶体管的低可编程电压非易失性存储器件使用p型硅纳米线通道
7. Organic Memory Devices: 9,10-Imide-Pyrene-Fused Pyrazaacenes (IPPA) as N-Type Doping Materials for High-Performance Nonvolatile Organic Field Effect Transistor Memory Devices (Adv. Electron. Mater. 2/2019) [O] . Ze-Hua Wu, Wen-Jing Sun, Hu-Hu Tian, 2019

机译：有机记忆装置：9,10-酰亚胺 - 芘 - 融合吡唑（IPPA）作为N型掺杂材料，用于高性能非易失性有机场效应晶体管内存装置（ADV。电子。Matter。2/2019）
8. 2K nonvolatile shadow RAM and 265K EEPROM SONOS nonvolatile memory development [R] . Nasby, R. D. , Murray, J. R. , Habermehl, S. D. , 1998

机译：2K非易失性影子Ram和265K EEpROm sONOs非易失性存储器开发

Acousto-Ferroelectric RAM -New Type of Nonvolatile Memory Device

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