Analysis of the Metal Impurities in the Organic Semiconductor Materials for Molecular Electronics by Inductively Coupled Plasma - Mass Spectrometry (ICPMS)

摘要

We report the determination of elemental metallic impurities (Li, Na, Al, Mg, Be, Pb, Mn, Co, Ti, Sn, Cu, Cr, V, Zn, Fe, Ca, K and Ni) in organic semiconductor materials, such as Tetracene, Anthracene, Pentacene, Functionalized Pentacene and Rubrene, using an inductively coupled plasma quadrupole mass spectrometer (ICP-MS) fitted with a dynamic reaction cell (DRC). The organic semiconductors are employed in molecular electronic devices, such as Organic Field-Effect Transistors (OFETs). The purity of the starting material is one of the most important parameter for fabrication of a molecular electronic device. Effects of elemental contamination on the performance of OFETs have not been adequately investigated, although, some studies have shown that, in some part, the problem of poor stability of organic devices originates from the presence of metal impurities. The determination of Fe, Ca, K and Ni in the organic semiconductor materials was carried out using NH3 as a reaction gas in the DRC to obviate the effect of polyatomic isobaric interferences. The other metal elements such as Li, Na, Al, Mg, Be, Pb, Mn, Co, Ti, Sn, Cu, Cr, V and Zn have been determined under standard mode conditions