An analytical method to determine MOSFET''s high frequency noise parameters from 50-/spl Omega/ noise figure measurements

摘要

An analytical method, along with closed-form solutions, for extracting MOSFET''s RF noise parameters is presented. This method extracts the minimum noise figure, NF/sub min/ equivalent noise resistance, R/sub n/, and optimum source admittance Y/sub opt/, of MOSFET directly from a single high frequency 50-/spl Omega/ noise figure measurement. This method can accurately predict the noise parameters of deep-submicron MOSFETs.